91912 tkim/92006 msim tc-00000143,00000144/72602 tsim ta-2636, 2637 no.7198-1/7 http://onsemi.com semiconductor components industries, llc, 2013 august, 2013 2sa1179n/2sc2812n bipolar transistor (?) 50v, (?) 150ma, low v ce ( sat ) , ( pnp ) npn single cpa stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? miniature package facilitates miniaturization in end products ? high breakdown voltage speci cations ( ) : 2sa1179n absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)55 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)5 v collector current i c (--)150 ma collector current (pulse) i cp (--)300 ma base current i b (--)30 ma collector dissipation p c 200 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7053-001 ordering number : en7198b product & package information ? package : cpa ? jeita, jedec : sc-59, to-236, sot-23, to-236ab ? minimum packing quantity : 3,000 pcs./reel packing type: tb marking tb 1 : base 2 : emitter 3 : collecto r cpa 2.93 1.9 0.95 0.45 1.3 max 3 1 2 0.13 0 to 0.1 1.0 1.3 2.4 0.55 0.55 0.2 min m lot no. lot no. l lot no. lot no. 2sc2812n 2sa1179n 2sa1179n6-tb-e 2sa1179n6-cpa-tb-e 2sc2812n6-tb-e 2SC2812N6-CPA-TB-E
2sa1179n / 2sc2812n no.7198-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)35v, i e =0a (--)0.1 a emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)0.1 a dc current gain h fe v ce =(--)6v, i c =(--)1ma 200 400 gain-bandwidth product f t 2sc2812n : v ce =6v, i c =1ma 100 mhz 2sa1179n : v ce =--6v, i c =--10ma (180) mhz output capacitance cob v cb =(--)6v, f=1mhz (4.0)3.0 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)50ma, i b =(--)5ma (--0.15)0.1 (--)0.5 v base-to-emitter saturation voltage v be (sat) i c =(--)50ma, i b =(--)5ma (--)1.0 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--)55 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)5 v * : the 2sa1179n / 2sc2812n are classi ed by 1ma h fe as follws : rank 6 h fe 200 to 400 ordering information device package shipping memo 2sa1179n6-tb-e cpa 3,000pcs./reel pb free 2sa1179n6-cpa-tb-e cpa 3,000pcs./reel 2sc2812n6-tb-e cpa 3,000pcs./reel 2SC2812N6-CPA-TB-E cpa 3,000pcs./reel it04195 0 --10 --20 --30 --40 --50 0 -- 4 --12 -- 8 --16 0 --80 --40 --120 --200 --160 --240 it04197 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 it04196 0 1020304050 0 4 8 16 12 20 it04198 0 1.0 1.2 0.6 0.8 0.4 0.2 0 120 160 200 240 80 40 i b =0 a -- 5 a --10 a --15 a --20 a --25 a --30 a --35 a --40 a --45 a --50 a 2sa1179n 2sa1179n v ce = --6v 2sc2812n v ce =6v i b =0 a 5 a 10 a 15 a 20 a 25 a 30 a 35 a 40 a 45 a 50 a 2sc2812n ta=75 c 25 c --25 c ta=75 c 25 c --25 c i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- ma i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- ma i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- ma base-to-emitter voltage, v be -- v collector current, i c -- ma i c -- v be
2sa1179n / 2sc2812n no.7198-3/7 it04205 --1.0 --10 23 57 --100 23 57 23 5 --0.1 2 7 5 3 2 5 3 it04203 23 57 57 2 3 57 --10 --100 --1.0 7 7 5 3 2 2 1.0 10 2sa1179n f=1mhz it04204 23 57 57 2 3 57 10 100 1.0 7 7 5 5 3 2 2 1.0 10 2sc2812n f=1mhz it04206 1.0 10 23 57 100 23 57 23 5 0.1 0.01 2 7 5 3 2 5 3 2sa1179n i c / i b = --10 2sc2812n i c / i b =10 collector current, i c -- ma v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- v collector-to-emitter saturation voltage, v ce (sat) -- v collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector current, i c -- ma v ce (sat) -- i c collector-to-base voltage, v cb -- v cob -- v cb cob -- v cb output capacitance, cob -- pf 57 23 --1.0 57 23 --10 23 --100 7 100 5 3 7 5 3 2 it04201 it04199 57 3 2 --0.1 --1.0 57 3 2 --10 57 3 23 2 --100 1000 5 3 7 100 2 7 5 2sa1179n v ce = --6v 2sa1179n v ce = --6v ta=75 c --25 c 25 c it04200 57 3 2 0.1 57 3 2 1.0 57 3 2 10 3 2 100 1000 5 3 7 100 2 2sc2812n v ce =6v ta=75 c --25 c 25 c 57 23 1.0 57 23 10 23 100 7 100 5 3 7 5 3 2 it04202 2sc2812n v ce =6v gain-bandwidth product, f t -- mhz f t -- ic f t -- ic collector current, i c -- ma gain-bandwidth product, f t -- mhz collector current, i c -- ma dc current gain, h fe h fe -- i c collector current, i c -- ma collector current, i c -- ma dc current gain, h fe h fe -- i c
2sa1179n / 2sc2812n no.7198-4/7 it04207 0.1 23 57 1.0 23 57 10 23 57 100 0.01 0.001 7 2 7 5 3 2 5 3 7 2 it04208 0 20 40 60 80 100 120 140 160 0 50 100 150 200 250 5 3 0.1 dc operation i cp =0.3a i c =0.15a 100 s 10 s 1ms 10ms 100ms ta=25 c mounted on a glass epoxy board (20 ? 30 ? 1.6mm) for pnp, the minus sign is omitted. collector-to-emitter voltage, v ce -- v a s o collector current, i c -- a ambient temperature, ta -- c p c -- ta collector dissipation, p c -- mw
2sa1179n / 2sc2812n no.7198-5/7 embossed taping speci cation 2sa1179n6-tb-e, 2sa1179n6-cpa-tb-e, 2sc2812n6-tb-e, 2SC2812N6-CPA-TB-E
2sa1179n / 2sc2812n no.7198-6/7 outline drawing land pattern example 2sa1179n6-tb-e, 2sa1179n6-cpa-tb-e, 2sc2812n6-tb-e, 2SC2812N6-CPA-TB-E mass (g) unit 0.013 * for reference mm unit: mm 0.95 0.95 1.0 2.4 0.8
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